- gallium-nitride FET
- полевой транзистор на нитриде галлия
The New English-Russian Dictionary of Radio-electronics. F.V Lisovsky . 2005.
The New English-Russian Dictionary of Radio-electronics. F.V Lisovsky . 2005.
Field-effect transistor — FET redirects here. For other uses, see FET (disambiguation). High power N channel field effect transistor The field effect transistor (FET) is a transistor that relies on an electric field to control the shape and hence the conductivity of a… … Wikipedia
Light-emitting diode — LED redirects here. For other uses, see LED (disambiguation). Light emitting diode Red, pure green and blue LEDs of the 5mm diffused type Type Passive, optoelectronic Working principle Electr … Wikipedia
High Electron Mobility Transistor — HEMT stands for High Electron Mobility Transistor, and is also called heterostructure FET (HFET) or modulation doped FET (MODFET). A HEMT is a field effect transistor incorporating a junction between two materials with different band gaps (i.e. a … Wikipedia
MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia
Mathematics and Physical Sciences — ▪ 2003 Introduction Mathematics Mathematics in 2002 was marked by two discoveries in number theory. The first may have practical implications; the second satisfied a 150 year old curiosity. Computer scientist Manindra Agrawal of the… … Universalium
Gan — may refer to: * A Romanization of the Chinese character 甘 (Gān), an abbreviation for Gansu Province in the People s Republic of China * A Romanization of the Chinese character 赣 (Gàn), an abbreviation for: ** Gan River ** Jiangxi Province in the… … Wikipedia